Browsing by Subject "Tin nitride"
Now showing items 1-6 of 6
-
Article
Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition
(2009)Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...
-
Article
Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition
(2009)Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...
-
Article
Synthesis of Tin nitride Sn xN y nanowires by chemical vapour deposition
(2009)Tin nitride (Sn xN y) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH 4Cl at 450 °C under a steady flow of NH 3. The Sn xN ...
-
Article
Synthesis of Tin nitride Sn xN y nanowires by chemical vapour deposition
(2009)Tin nitride (Sn xN y) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH 4Cl at 450 °C under a steady flow of NH 3. The Sn xN ...
-
Article
A systematic study of the nitridation of SnO 2 nanowires grown by the vapor liquid solid mechanism
(2012)SnO 2 nanowires (NWs) with diameters of 50 nm and lengths ≥10 μm have been grown at 800 °C on 1.0 nm Au/Si(001) via the vapor liquid solid mechanism and the low pressure chemical vapor deposition. These exhibited clear ...
-
Article
A systematic study of the nitridation of SnO 2 nanowires grown by the vapor liquid solid mechanism
(2012)SnO 2 nanowires (NWs) with diameters of 50 nm and lengths ≥10 μm have been grown at 800 °C on 1.0 nm Au/Si(001) via the vapor liquid solid mechanism and the low pressure chemical vapor deposition. These exhibited clear ...